QM2416Y1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

QM2416Y1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416Y1 meet the RoHS and Green Product req

QM2416C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416C1 meet the RoHS and Green Product req

QM2416J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 4.3Afor most of the small power switching and load switch applications. Applications The QM2416J meet the RoHS and Green Product requir

QM2416K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 3.5Afor most of the small power switching and load switch applications. Applications The QM2416K meet the RoHS and Green Product requir

QM2416Kwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver