Справочник MOSFET. QM2416Y1

 

QM2416Y1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: QM2416Y1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 29.6 ns
   Cossⓘ - Выходная емкость: 41 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: SOT-323

 Аналог (замена) для QM2416Y1

 

 

QM2416Y1 Datasheet (PDF)

 ..1. Size:348K  ubiq
qm2416y1.pdf

QM2416Y1
QM2416Y1

QM2416Y1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416Y1 meet the RoHS and Green Product req

 8.1. Size:357K  ubiq
qm2416c1.pdf

QM2416Y1
QM2416Y1

QM2416C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416C1 meet the RoHS and Green Product req

 8.2. Size:247K  ubiq
qm2416j.pdf

QM2416Y1
QM2416Y1

QM2416J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 4.3Afor most of the small power switching and load switch applications. Applications The QM2416J meet the RoHS and Green Product requir

 8.3. Size:314K  ubiq
qm2416k.pdf

QM2416Y1
QM2416Y1

QM2416K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 3.5Afor most of the small power switching and load switch applications. Applications The QM2416K meet the RoHS and Green Product requir

 8.4. Size:877K  cn vbsemi
qm2416k.pdf

QM2416Y1
QM2416Y1

QM2416Kwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver

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