QM2423V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM2423V
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 19.2 nC
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 165 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TSOP6
Búsqueda de reemplazo de MOSFET QM2423V
QM2423V Datasheet (PDF)
qm2423v.pdf
QM2423V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.5Afor most of the small power switching and load switch applications. Applications The QM2423V meet the RoHS and Green Product requ
qm2423k.pdf
QM2423K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.2Afor most of the small power switching and load switch applications. Applications The QM2423K meet the RoHS and Green Product requ
qm2423k.pdf
QM2423Kwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
qm2421k.pdf
QM2421K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 43m -4Afor most of the small power switching and load switch applications. Applications The QM2421K meet the RoHS and Green Product requi
qm2429s.pdf
QM2429S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2429S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 15m -8.5Afor most of the small power switching and load switch applications. Applications The QM2429S meet the RoHS and Green Product req
qm2421m3.pdf
QM2421M3 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421M3 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 32m -24Afor most of the small power switching and load switch applications. Applications The QM2421M3 meet the RoHS and Green Product r
qm2427s.pdf
QM2427S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2427S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 9m -10.7Afor most of the synchronous buck converter applications . Applications The QM2427S meet the RoHS and Green Product requirement wi
qm2420k.pdf
QM2420K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2420K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 85m 3 Afor most of the small power switching and load switch applications. Applications The QM2420K meet the RoHS and Green Product require
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