Справочник MOSFET. QM2423V

 

QM2423V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: QM2423V
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TSOP6

 Аналог (замена) для QM2423V

 

 

QM2423V Datasheet (PDF)

 ..1. Size:355K  ubiq
qm2423v.pdf

QM2423V
QM2423V

QM2423V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.5Afor most of the small power switching and load switch applications. Applications The QM2423V meet the RoHS and Green Product requ

 8.1. Size:324K  ubiq
qm2423k.pdf

QM2423V
QM2423V

QM2423K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.2Afor most of the small power switching and load switch applications. Applications The QM2423K meet the RoHS and Green Product requ

 8.2. Size:906K  cn vbsemi
qm2423k.pdf

QM2423V
QM2423V

QM2423Kwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 9.1. Size:320K  ubiq
qm2421k.pdf

QM2423V
QM2423V

QM2421K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 43m -4Afor most of the small power switching and load switch applications. Applications The QM2421K meet the RoHS and Green Product requi

 9.2. Size:355K  ubiq
qm2429s.pdf

QM2423V
QM2423V

QM2429S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2429S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 15m -8.5Afor most of the small power switching and load switch applications. Applications The QM2429S meet the RoHS and Green Product req

 9.3. Size:319K  ubiq
qm2421m3.pdf

QM2423V
QM2423V

QM2421M3 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2421M3 is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 32m -24Afor most of the small power switching and load switch applications. Applications The QM2421M3 meet the RoHS and Green Product r

 9.4. Size:326K  ubiq
qm2427s.pdf

QM2423V
QM2423V

QM2427S P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2427S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 9m -10.7Afor most of the synchronous buck converter applications . Applications The QM2427S meet the RoHS and Green Product requirement wi

 9.5. Size:311K  ubiq
qm2420k.pdf

QM2423V
QM2423V

QM2420K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2420K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 85m 3 Afor most of the small power switching and load switch applications. Applications The QM2420K meet the RoHS and Green Product require

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