PHP50N06LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHP50N06LT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Paquete / Cubierta: SOT78

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PHP50N06LT Datasheet (PDF)

..1. Size:65K philips
php50n06lt 3.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

6.1. Size:54K philips
php50n06 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP50N06 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 52 ASwitched Mode Power Supplies Ptot Total power dissipation 150 W(SMPS), mo

7.1. Size:111K philips
phb50n03lt phd50n03lt php50n03lt 7.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V)g Logic leve

7.2. Size:49K philips
php50n03t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP50N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 50 Afeatures very low on-state r

Otros transistores... PHP3N40E , PHP3N50E , PHP3N60E , PHP42N03LT , PHP44N06LT , PHP4N60E , PHP4ND40E , PHP50N03LT , CEP83A3 , PHP55N03LT , PHP60N06LT , PHP65N06LT , PHP69N03LT , PHP6N10E , PHP6N50E , PHP6N60E , PHP6ND50E .

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