PHP6N50E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP6N50E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 5.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: SOT78

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PHP6N50E datasheet

 ..1. Size:77K  philips
 php6n50e phb6n50e.pdf pdf_icon

PHP6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 5.9 A g Low thermal resistance RDS(ON) 1.5 s GENERAL DESCRIPTION N-channel, enh

 9.1. Size:58K  philips
 php6nd50e phb6nd50e.pdf pdf_icon

PHP6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performance g Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di

 9.2. Size:53K  philips
 php6n10e 1.pdf pdf_icon

PHP6N50E

Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 100 V avalanche energy capability, stable ID Drain current (DC) 6.3 A blocking voltage, fast switching and Ptot Total power dis

 9.3. Size:63K  philips
 php6nd50e 2.pdf pdf_icon

PHP6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performance g Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di

MOSTRAR MÁS

Otros transistores... PHP4ND40E, PHP50N03LT, PHP50N06LT, PHP55N03LT, PHP60N06LT, PHP65N06LT, PHP69N03LT, PHP6N10E, IRFB7545, PHP6N60E, PHP6ND50E, PHP7N60E, PHP80N06LT, PHP87N03LT, PHP8N50E, PHP8ND50E, PHT11N06LT