All MOSFET. PHP6N50E Datasheet

 

PHP6N50E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHP6N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT78

 PHP6N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP6N50E Datasheet (PDF)

 ..1. Size:77K  philips
 php6n50e phb6n50e.pdf

PHP6N50E PHP6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 5.9 Ag Low thermal resistanceRDS(ON) 1.5 sGENERAL DESCRIPTIONN-channel, enh

 9.1. Size:58K  philips
 php6nd50e phb6nd50e.pdf

PHP6N50E PHP6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di

 9.2. Size:53K  philips
 php6n10e 1.pdf

PHP6N50E PHP6N50E

Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 100 Vavalanche energy capability, stable ID Drain current (DC) 6.3 Ablocking voltage, fast switching and Ptot Total power dis

 9.3. Size:63K  philips
 php6nd50e 2.pdf

PHP6N50E PHP6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di

 9.4. Size:74K  philips
 php6n60e phb6n60e.pdf

PHP6N50E PHP6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 5.4 Ag Low thermal resistanceRDS(ON) 1.8 sGENERAL DESCRIPTIONN-channel, enh

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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