PHP8N50E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP8N50E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 8.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: SOT78

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PHP8N50E datasheet

 ..1. Size:90K  philips
 php8n50e phb8n50e phw8n50e.pdf pdf_icon

PHP8N50E

Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 8.5 A g Low thermal resistance RDS(ON) 0.85 s GENERAL DESCRIPTION N-c

 9.1. Size:90K  philips
 php8nd50e phb8nd50e phw8nd50e.pdf pdf_icon

PHP8N50E

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 8.5 A High thermal cycling performance g Low thermal resistance RDS(ON) 0.85 Fast reverse

 9.2. Size:72K  philips
 php8nd50e 3.pdf pdf_icon

PHP8N50E

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 8.5 A High thermal cycling performance g Low thermal resistance RDS(ON) 0.85 Fast reverse

 9.3. Size:59K  philips
 php8n20e 2.pdf pdf_icon

PHP8N50E

Philips Semiconductors Product specification PowerMOS transistor PHP8N20E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 200 V avalanche energy capability, stable ID Drain current (DC) 9.2 A blocking voltage, fast switching and Ptot Total power dis

MOSTRAR MÁS

Otros transistores... PHP69N03LT, PHP6N10E, PHP6N50E, PHP6N60E, PHP6ND50E, PHP7N60E, PHP80N06LT, PHP87N03LT, AOD4184A, PHP8ND50E, PHT11N06LT, PHT6N03LT, PHT6N06LT, PHT8N06LT, PHW11N50E, PHW14N50E, PHW20N50E