QM6208V Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: QM6208V

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23.8 nS

Cossⓘ - Capacitancia de salida: 38 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TSOP6

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QM6208V datasheet

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QM6208V

QM6208V Dual N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6208V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.5A for most of the synchronous buck converter applications . Applications The QM6208V meet the RoHS and Green Product requireme

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QM6208V

QM6208S Dual N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6208S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 3.5A for most of the synchronous buck converter applications . Applications The QM6208S meet the RoHS and Green Product requiremen

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QM6208V

QM6204S Dual N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6204S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 32m 8A for most of the synchronous buck converter applications . Applications The QM6204S meet the RoHS and Green Product requirement

Otros transistores... QM6016D, QM6016F, QM6016P, QM6016S, QM6020AP, QM6020P, QM6204S, QM6208S, SI2302, QM6214Q, QM6214S, QM6301S, QM7018AD, QM7020P, QM8014D, QM8014U, QM8205V