QM6208V Datasheet. Specs and Replacement

Type Designator: QM6208V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23.8 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TSOP6

QM6208V substitution

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QM6208V datasheet

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QM6208V

QM6208V Dual N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6208V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.5A for most of the synchronous buck converter applications . Applications The QM6208V meet the RoHS and Green Product requireme... See More ⇒

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QM6208V

QM6208S Dual N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6208S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 3.5A for most of the synchronous buck converter applications . Applications The QM6208S meet the RoHS and Green Product requiremen... See More ⇒

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QM6208V

QM6204S Dual N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM6204S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 32m 8A for most of the synchronous buck converter applications . Applications The QM6204S meet the RoHS and Green Product requirement ... See More ⇒

Detailed specifications: QM6016D, QM6016F, QM6016P, QM6016S, QM6020AP, QM6020P, QM6204S, QM6208S, SI2302, QM6214Q, QM6214S, QM6301S, QM7018AD, QM7020P, QM8014D, QM8014U, QM8205V

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