All MOSFET. QM6208V Datasheet

 

QM6208V Datasheet and Replacement


   Type Designator: QM6208V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.8 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TSOP6
 

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QM6208V Datasheet (PDF)

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QM6208V

QM6208V Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6208V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.5Afor most of the synchronous buck converter applications . Applications The QM6208V meet the RoHS and Green Product requireme

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QM6208V

QM6208S Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6208S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 3.5Afor most of the synchronous buck converter applications . Applications The QM6208S meet the RoHS and Green Product requiremen

 9.1. Size:340K  ubiq
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QM6208V

QM6204S Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6204S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 32m 8Afor most of the synchronous buck converter applications . Applications The QM6204S meet the RoHS and Green Product requirement

Datasheet: QM6016D , QM6016F , QM6016P , QM6016S , QM6020AP , QM6020P , QM6204S , QM6208S , IRFZ46N , QM6214Q , QM6214S , QM6301S , QM7018AD , QM7020P , QM8014D , QM8014U , QM8205V .

History: IRF6216PBF | AM2394NE | APT6029BLL | APT38N60BC6 | NCE70N1K4F | CEU06N7 | VBFB1102M

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