QM6208V Datasheet and Replacement
Type Designator: QM6208V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 23.8 nS
Cossⓘ - Output Capacitance: 38 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TSOP6
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QM6208V Datasheet (PDF)
qm6208v.pdf

QM6208V Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6208V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 100m 2.5Afor most of the synchronous buck converter applications . Applications The QM6208V meet the RoHS and Green Product requireme
qm6208s.pdf

QM6208S Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6208S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 90m 3.5Afor most of the synchronous buck converter applications . Applications The QM6208S meet the RoHS and Green Product requiremen
qm6204s.pdf

QM6204S Dual N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6204S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 32m 8Afor most of the synchronous buck converter applications . Applications The QM6204S meet the RoHS and Green Product requirement
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - QM6208V MOSFET datasheet
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History: 2SJ473-01S | IRF7759L2TR1PBF



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