PHT6N03LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHT6N03LT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.8 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Corriente continua de drenaje |Id|: 5.9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET PHT6N03LT
PHT6N03LT Datasheet (PDF)
pht6n03lt 3.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 5.9 A Stable off-state characteristics High thermal cycling performance RDS(ON) 30 m (VGS = 5 V)g Surface mounting packageRDS(ON)
pht6n03t 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 Atrench techno
pht6n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AUsing trench technology
pht6n06lt 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AThe device features very low Dr
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