PHT6N03LT Datasheet. Specs and Replacement

Type Designator: PHT6N03LT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT223

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PHT6N03LT datasheet

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PHT6N03LT

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PHT6N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHT6N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 A trench techno... See More ⇒

 8.1. Size:58K  philips
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PHT6N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 A Using trench technology... See More ⇒

 8.2. Size:54K  philips
 pht6n06lt 2.pdf pdf_icon

PHT6N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 A The device features very low Dr... See More ⇒

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Detailed specifications: PHP6N60E, PHP6ND50E, PHP7N60E, PHP80N06LT, PHP87N03LT, PHP8N50E, PHP8ND50E, PHT11N06LT, AON6426, PHT6N06LT, PHT8N06LT, PHW11N50E, PHW14N50E, PHW20N50E, PHW7N60E, PHW8N50E, PHW8ND50E

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