RFM12N08L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFM12N08L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 70 nS
Cossⓘ - Capacitancia de salida: 325 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Encapsulados: TO-204AA
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RFM12N08L datasheet
9.2. Size:175K toshiba
rfm12u7x.pdf 
RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in t
9.3. Size:267K fairchild semi
irfm120atf.pdf
IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum
9.4. Size:269K fairchild semi
irfm120a.pdf
IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum
9.5. Size:965K samsung
irfm120a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va
9.6. Size:414K onsemi
irfm120a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.7. Size:813K cn vbsemi
irfm120a.pdf
IRFM120A www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ABS
Otros transistores... RFH45N06, RFK25P08, RFK25P10, RFK35N08, RFK35N10, RFM10N12, RFM10N15, RFM12N08, 8205A, RFM12N10, RFM12N10L, RFM12N18, RFM12N20, RFM12P08, RFM12P10, RFM15N05L, RFM15N06L
