PHW7N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHW7N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: SOT429

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PHW7N60E datasheet

 ..1. Size:91K  philips
 php7n60e phb7n60e phw7n60e.pdf pdf_icon

PHW7N60E

Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 7 A g Low thermal resistance RDS(ON) 1.2 s GENERAL DESCRIPTION N-chan

 7.1. Size:55K  philips
 phw7n60 1.pdf pdf_icon

PHW7N60E

Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 600 V avalanche energy capability, stable ID Drain current (DC) 7 A off-state characteristics, fast Ptot Total power dissipation

 7.2. Size:51K  philips
 phw7n60.pdf pdf_icon

PHW7N60E

PHW7N60 Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 600 V avalanche energy capability, stable ID Drain current (DC) 7 A off-state characteristics, fast Ptot

Otros transistores... PHP8ND50E, PHT11N06LT, PHT6N03LT, PHT6N06LT, PHT8N06LT, PHW11N50E, PHW14N50E, PHW20N50E, IRF840, PHW8N50E, PHW8ND50E, PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E, PHX3N50E, PHX3N60E