RHK005N03FRA Todos los transistores

 

RHK005N03FRA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RHK005N03FRA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: SMT3
 

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RHK005N03FRA Datasheet (PDF)

 ..1. Size:911K  rohm
 rhk005n03fra.pdf pdf_icon

RHK005N03FRA

RHK005N03FRARHK005N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK005N03FRARHK005N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbrevia

 5.1. Size:51K  rohm
 rhk005n03t146.pdf pdf_icon

RHK005N03FRA

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications

 5.2. Size:53K  rohm
 rhk005n03.pdf pdf_icon

RHK005N03FRA

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications

 9.1. Size:913K  rohm
 rhk003n06fra.pdf pdf_icon

RHK005N03FRA

RHK003N06FRARHK003N06TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK003N06FRARHK003N06 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol :

MOSTRAR MÁS

Otros transistores... RFP15N15 , RFP2N08 , RFP2N10 , RFP5P12 , RFP5P15 , RFP8P08 , RHK003N06FRA , RHK003N06T146 , P60NF06 , RHK005N03T146 , RHP020N06T100 , RHP030N03T100 , RHU002N06 , RHU002N06FRA , RHU003N03 , RHU003N03FRA , RJJ0601JPE .

History: HCP12NK65V | AFN3414S

 

 
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