RHK005N03FRA MOSFET. Datasheet pdf. Equivalent
Type Designator: RHK005N03FRA
Marking Code: KU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 0.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm
Package: SMT3
RHK005N03FRA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RHK005N03FRA Datasheet (PDF)
1.1. rhk005n03t146.pdf 
Size:51K _update_mosfet
RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : KU Packaging specifications
1.2. rhk005n03fra.pdf Size:911K _update_mosfet
RHK005N03FRA RHK005N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHK005N03FRA RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbrevia
1.3. rhk005n03.pdf Size:53K _rohm
RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : KU Packaging specifications and
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
