All MOSFET. RHK005N03FRA Datasheet

 

RHK005N03FRA MOSFET. Datasheet pdf. Equivalent


   Type Designator: RHK005N03FRA
   Marking Code: KU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: SMT3

 RHK005N03FRA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RHK005N03FRA Datasheet (PDF)

 ..1. Size:911K  rohm
rhk005n03fra.pdf

RHK005N03FRA
RHK005N03FRA

RHK005N03FRARHK005N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK005N03FRARHK005N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbrevia

 5.1. Size:51K  rohm
rhk005n03t146.pdf

RHK005N03FRA
RHK005N03FRA

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications

 5.2. Size:53K  rohm
rhk005n03.pdf

RHK005N03FRA
RHK005N03FRA

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications

 9.1. Size:913K  rohm
rhk003n06fra.pdf

RHK005N03FRA
RHK005N03FRA

RHK003N06FRARHK003N06TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK003N06FRARHK003N06 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol :

 9.2. Size:52K  rohm
rhk003n06t146.pdf

RHK005N03FRA
RHK005N03FRA

RHK003N06 Transistors 4V Drive Nch MOS FET RHK003N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : RKS Packaging specifications and hFE Inn

 9.3. Size:889K  cn vbsemi
rhk003n06t146.pdf

RHK005N03FRA
RHK005N03FRA

RHK003N06T146www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD Protection

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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