RHP020N06T100 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RHP020N06T100
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: MPT3
Búsqueda de reemplazo de MOSFET RHP020N06T100
Principales características: RHP020N06T100
rhp020n06t100.pdf
4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) High speed switching. 0.4 3) Wide SOA. 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol LR Applications Switching Packaging specifications and hFE Inner circuit DRAIN Package Taping
rhp020n06.pdf
4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) High speed switching. 0.4 3) Wide SOA. 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol LR Applications Switching Packaging specifications and hFE Inner circuit DRAIN Package Taping
rhp020n06.pdf
SMD Type MOSFET N-Channel MOSFET RHP020N06 (KHP020N06) SOT-89 Unit mm 1.70 0.1 Features VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V) RDS(ON) 280m (VGS = 4.5V) 0.42 0.1 0.46 0.1 RDS(ON) 340m (VGS = 4V) High speed switching 1.Gate 2.Drain 3.Source DRAIN GATE *2 *1 SOURCE *1 ESD PROTECTION DIODE *2 BODY DIOD
Otros transistores... RFP2N10 , RFP5P12 , RFP5P15 , RFP8P08 , RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , RHK005N03T146 , 4N60 , RHP030N03T100 , RHU002N06 , RHU002N06FRA , RHU003N03 , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA .
Liste
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