RHP020N06T100 Todos los transistores

 

RHP020N06T100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RHP020N06T100

Código: LR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.5 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 7 nC

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 50 pF

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: MPT3

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RHP020N06T100 Datasheet (PDF)

1.1. rhp020n06t100.pdf Size:221K _update_mosfet

RHP020N06T100
RHP020N06T100

4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) High speed switching. 0.4 3) Wide SOA. 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol : LR Applications Switching Packaging specifications and hFE Inner circuit DRAIN Package Taping

1.2. rhp020n06.pdf Size:221K _rohm

RHP020N06T100
RHP020N06T100

4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) High speed switching. 0.4 3) Wide SOA. 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol : LR Applications Switching Packaging specifications and hFE Inner circuit DRAIN Package Taping Ty

 1.3. rhp020n06.pdf Size:1283K _kexin

RHP020N06T100
RHP020N06T100

SMD Type MOSFET N-Channel MOSFET RHP020N06 (KHP020N06) SOT-89 Unit:mm 1.70 0.1 ■ Features ● VDS (V) = 60V ● ID = 2 A (VGS = 10V) ● RDS(ON) < 200mΩ (VGS = 10V) ● RDS(ON) < 280mΩ (VGS = 4.5V) 0.42 0.1 0.46 0.1 ● RDS(ON) < 340mΩ (VGS = 4V) ● High speed switching 1.Gate 2.Drain 3.Source DRAIN GATE *2 *1 SOURCE *1 ESD PROTECTION DIODE *2 BODY DIOD

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