RHP020N06T100 Datasheet. Specs and Replacement
Type Designator: RHP020N06T100 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: MPT3
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RHP020N06T100 substitution
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RHP020N06T100 datasheet
rhp020n06t100.pdf
4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) High speed switching. 0.4 3) Wide SOA. 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol LR Applications Switching Packaging specifications and hFE Inner circuit DRAIN Package Taping ... See More ⇒
rhp020n06.pdf
4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) High speed switching. 0.4 3) Wide SOA. 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate (2)Drain (3)Source Abbreviated symbol LR Applications Switching Packaging specifications and hFE Inner circuit DRAIN Package Taping ... See More ⇒
rhp020n06.pdf
SMD Type MOSFET N-Channel MOSFET RHP020N06 (KHP020N06) SOT-89 Unit mm 1.70 0.1 Features VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V) RDS(ON) 280m (VGS = 4.5V) 0.42 0.1 0.46 0.1 RDS(ON) 340m (VGS = 4V) High speed switching 1.Gate 2.Drain 3.Source DRAIN GATE *2 *1 SOURCE *1 ESD PROTECTION DIODE *2 BODY DIOD... See More ⇒
Detailed specifications: RFP2N10, RFP5P12, RFP5P15, RFP8P08, RHK003N06FRA, RHK003N06T146, RHK005N03FRA, RHK005N03T146, IRFP250, RHP030N03T100, RHU002N06, RHU002N06FRA, RHU003N03, RHU003N03FRA, RJJ0601JPE, RJJ0601JPN, RJK005N03FRA
Keywords - RHP020N06T100 MOSFET specs
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