RHP020N06T100 Datasheet and Replacement
Type Designator: RHP020N06T100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: MPT3
RHP020N06T100 substitution
RHP020N06T100 Datasheet (PDF)
rhp020n06t100.pdf

4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT34.51.51.6 Features 1) Low On-resistance. (1) (2) (3)2) High speed switching. 0.43) Wide SOA. 0.50.4 0.41.5 1.53.0(1)Gate(2)Drain(3)Source Abbreviated symbol : LR ApplicationsSwitching Packaging specifications and hFE Inner circuit DRAINPackage Taping
rhp020n06.pdf

4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT34.51.51.6 Features 1) Low On-resistance. (1) (2) (3)2) High speed switching. 0.43) Wide SOA. 0.50.4 0.41.5 1.53.0(1)Gate(2)Drain(3)Source Abbreviated symbol : LR ApplicationsSwitching Packaging specifications and hFE Inner circuit DRAINPackage Taping
rhp020n06.pdf

SMD Type MOSFETN-Channel MOSFETRHP020N06 (KHP020N06)SOT-89Unit:mm1.70 0.1 Features VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V) RDS(ON) 280m (VGS = 4.5V)0.42 0.10.46 0.1 RDS(ON) 340m (VGS = 4V) High speed switching1.Gate2.Drain3.SourceDRAINGATE*2*1SOURCE*1 ESD PROTECTION DIODE*2 BODY DIOD
Datasheet: RFP2N10 , RFP5P12 , RFP5P15 , RFP8P08 , RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , RHK005N03T146 , 2SK3568 , RHP030N03T100 , RHU002N06 , RHU002N06FRA , RHU003N03 , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA .
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