RHU002N06 Todos los transistores

 

RHU002N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RHU002N06

Código: KP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 2.2 nC

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 8 pF

Resistencia drenaje-fuente RDS(on): 2.4 Ohm

Empaquetado / Estuche: SOT-323

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RHU002N06 Datasheet (PDF)

1.1. rhu002n06.pdf Size:60K _update_mosfet

RHU002N06
RHU002N06

RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 External dimensions (Unit : mm) Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 1.25 5) Easily designed drive circuits. 2.1 6) Easy to use in parallel. 0.1Min. Each lead has same dimensions Structure Silicon N-channel Abbreviated symbol : KP MOSFET transisto

1.2. rhu002n06fra.pdf Size:1034K _update_mosfet

RHU002N06
RHU002N06

AEC-Q101 Qualified 4V Drive Nch MOSFET RHU002N06FRA Structure Dimensions (Unit : mm) Silicon N-channel UMT3 MOSFET transistor 2.0 0.9 0.3 0.2 0.7 (3) Features 1) Low on-resistance. (2) (1) 2) High ESD. 0.65 0.65 3) High-speed switching. 0.15 1.3 4) Low-voltage drive (4V). (1) Source Each lead has same dimensions 5) Drive circuits can be simple. (2) Gate Abb

 5.1. rhu003n03.pdf Size:48K _update_mosfet

RHU002N06
RHU002N06

RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol : MN (3) Drain Packaging specifications Inn

5.2. rhu003n03fra.pdf Size:911K _update_mosfet

RHU002N06
RHU002N06

RHU003N03FRA RHU003N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHU003N03FRA RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol : MN

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