RHU002N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RHU002N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Paquete / Cubierta: SOT-323
Búsqueda de reemplazo de RHU002N06 MOSFET
RHU002N06 Datasheet (PDF)
rhu002n06.pdf

RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 External dimensions (Unit : mm) Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 1.255) Easily designed drive circuits. 2.16) Easy to use in parallel. 0.1Min.Each lead has same dimensions Structure Silicon N-channel Abbreviated symbol : KPMOSFET transisto
rhu002n06fra.pdf

AEC-Q101 Qualified4V Drive Nch MOSFETRHU002N06FRAStructure Dimensions (Unit : mm)Silicon N-channelUMT3MOSFET transistor2.0 0.90.3 0.2 0.7(3)Features 1) Low on-resistance. (2) (1)2) High ESD. 0.65 0.653) High-speed switching. 0.151.34) Low-voltage drive (4V). (1) SourceEach lead has same dimensions5) Drive circuits can be simple. (2) GateAbb
rhu003n03fra.pdf

RHU003N03FRARHU003N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHU003N03FRARHU003N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : MN
rhu003n03.pdf

RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : MN(3) Drain Packaging specifications Inn
Otros transistores... RFP5P15 , RFP8P08 , RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , RHK005N03T146 , RHP020N06T100 , RHP030N03T100 , P0903BDG , RHU002N06FRA , RHU003N03 , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA , RJK005N03T146 , RJK0323JPD .
History: SMC3056 | STP80NF70



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