RHU002N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RHU002N06
Código: KP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.2 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.5 V
Carga de compuerta (Qg): 2.2 nC
Tiempo de elevación (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 8 pF
Resistencia drenaje-fuente RDS(on): 2.4 Ohm
Empaquetado / Estuche: SOT-323
Búsqueda de reemplazo de MOSFET RHU002N06
RHU002N06 Datasheet (PDF)
1.1. rhu002n06.pdf 
Size:60K _update_mosfet
RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 External dimensions (Unit : mm) Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 1.25 5) Easily designed drive circuits. 2.1 6) Easy to use in parallel. 0.1Min. Each lead has same dimensions Structure Silicon N-channel Abbreviated symbol : KP MOSFET transisto
1.2. rhu002n06fra.pdf Size:1034K _update_mosfet
AEC-Q101 Qualified 4V Drive Nch MOSFET RHU002N06FRA Structure Dimensions (Unit : mm) Silicon N-channel UMT3 MOSFET transistor 2.0 0.9 0.3 0.2 0.7 (3) Features 1) Low on-resistance. (2) (1) 2) High ESD. 0.65 0.65 3) High-speed switching. 0.15 1.3 4) Low-voltage drive (4V). (1) Source Each lead has same dimensions 5) Drive circuits can be simple. (2) Gate Abb
5.1. rhu003n03.pdf Size:48K _update_mosfet
RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol : MN (3) Drain Packaging specifications Inn
5.2. rhu003n03fra.pdf Size:911K _update_mosfet
RHU003N03FRA RHU003N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHU003N03FRA RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol : MN
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