RHU002N06FRA Todos los transistores

 

RHU002N06FRA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RHU002N06FRA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: UMT3
 

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RHU002N06FRA datasheet

 ..1. Size:1034K  rohm
 rhu002n06fra.pdf pdf_icon

RHU002N06FRA

AEC-Q101 Qualified 4V Drive Nch MOSFET RHU002N06FRA Structure Dimensions (Unit mm) Silicon N-channel UMT3 MOSFET transistor 2.0 0.9 0.3 0.2 0.7 (3) Features 1) Low on-resistance. (2) (1) 2) High ESD. 0.65 0.65 3) High-speed switching. 0.15 1.3 4) Low-voltage drive (4V). (1) Source Each lead has same dimensions 5) Drive circuits can be simple. (2) Gate Abb

 5.1. Size:60K  rohm
 rhu002n06.pdf pdf_icon

RHU002N06FRA

RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 External dimensions (Unit mm) Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 1.25 5) Easily designed drive circuits. 2.1 6) Easy to use in parallel. 0.1Min. Each lead has same dimensions Structure Silicon N-channel Abbreviated symbol KP MOSFET transisto

 9.1. Size:911K  rohm
 rhu003n03fra.pdf pdf_icon

RHU002N06FRA

RHU003N03FRA RHU003N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHU003N03FRA RHU003N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol MN

 9.2. Size:48K  rohm
 rhu003n03.pdf pdf_icon

RHU002N06FRA

RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol MN (3) Drain Packaging specifications Inn

MOSTRAR MÁS

Otros transistores... RFP8P08 , RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , RHK005N03T146 , RHP020N06T100 , RHP030N03T100 , RHU002N06 , 2SK3568 , RHU003N03 , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA , RJK005N03T146 , RJK0323JPD , RJK0329DPB-00 .

History: IRFP450

 

 
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