RHU002N06FRA Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: RHU002N06FRA
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 8 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
Тип корпуса: UMT3
Аналог (замена) для RHU002N06FRA
RHU002N06FRA Datasheet (PDF)
rhu002n06fra.pdf

AEC-Q101 Qualified4V Drive Nch MOSFETRHU002N06FRAStructure Dimensions (Unit : mm)Silicon N-channelUMT3MOSFET transistor2.0 0.90.3 0.2 0.7(3)Features 1) Low on-resistance. (2) (1)2) High ESD. 0.65 0.653) High-speed switching. 0.151.34) Low-voltage drive (4V). (1) SourceEach lead has same dimensions5) Drive circuits can be simple. (2) GateAbb
rhu002n06.pdf

RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 External dimensions (Unit : mm) Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 1.255) Easily designed drive circuits. 2.16) Easy to use in parallel. 0.1Min.Each lead has same dimensions Structure Silicon N-channel Abbreviated symbol : KPMOSFET transisto
rhu003n03fra.pdf

RHU003N03FRARHU003N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHU003N03FRARHU003N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : MN
rhu003n03.pdf

RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : MN(3) Drain Packaging specifications Inn
Другие MOSFET... RFP8P08 , RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , RHK005N03T146 , RHP020N06T100 , RHP030N03T100 , RHU002N06 , 5N65 , RHU003N03 , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA , RJK005N03T146 , RJK0323JPD , RJK0329DPB-00 .
History: IRFP450 | SIHFIBC40G | IRFZ48ZSPBF
History: IRFP450 | SIHFIBC40G | IRFZ48ZSPBF



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