PHX2N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PHX2N60E Datasheet (PDF)

..1. Size:64K philips
phx2n60e 3.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistors PHX2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.3 Ag Isolated packageRDS(ON) 6 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan

9.1. Size:85K philips
phx2n50e.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistors PHX2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 1.4 Ag Isolated packageRDS(ON) 5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan

9.2. Size:24K philips
phx2n40e 1.pdf pdf_icon

Philips Semiconductors Objective specification PowerMOS transistor PHX2N40E Isolated version of PHP4N40EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 2.4 Ablocking volt

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