All MOSFET. PHX2N60E Datasheet

 

PHX2N60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHX2N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT186A

 PHX2N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHX2N60E Datasheet (PDF)

Datasheet: PHW11N50E , PHW14N50E , PHW20N50E , PHW7N60E , PHW8N50E , PHW8ND50E , PHW9N60E , PHX2N50E , IRF640 , PHX3N40E , PHX3N50E , PHX3N60E , PHX4N60E , PHX4ND40E , PHX6N60E , PHX6NA60E , PHX6ND50E .

 

 
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