RJK03M5DNS Todos los transistores

 

RJK03M5DNS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK03M5DNS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm
   Paquete / Cubierta: HWSON-8
 

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RJK03M5DNS Datasheet (PDF)

 ..1. Size:125K  renesas
 rjk03m5dns.pdf pdf_icon

RJK03M5DNS

Preliminary Datasheet RJK03M5DNS R07DS0769EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 29, 2012Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

 6.1. Size:133K  renesas
 rjk03m5dpa.pdf pdf_icon

RJK03M5DNS

Preliminary Datasheet RJK03M5DPA 30V, 30A, 6.5mmax. R07DS0770EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package name

 8.1. Size:181K  renesas
 rjk03m3dpa.pdf pdf_icon

RJK03M5DNS

Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9mmax. R07DS0767EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

 8.2. Size:148K  renesas
 rjk03m4dpa.pdf pdf_icon

RJK03M5DNS

Preliminary Datasheet RJK03M4DPA 30V, 35A, 4.6mmax. R07DS0768EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

MOSTRAR MÁS

Otros transistores... RJK0331DPB-00 , RJK0331DPB-01 , RJK0369DSP , RJK0371DSP , RJK03M1DPA , RJK03M2DPA , RJK03M3DPA , RJK03M4DPA , IRF1405 , RJK03M5DPA , RJK0406JPE , RJK0601DPN-E0 , RJK0602DPN-E0 , RJK0603DPN-E0 , RJK0628JPE , RJK0629JPE , RJK0630JPE .

History: 7N65L-T2Q-T | CS6N90W | RJK03M5DPA | RJK0628JPE

 

 
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