RJK03M5DNS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK03M5DNS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm

Encapsulados: HWSON-8

 Búsqueda de reemplazo de RJK03M5DNS MOSFET

- Selecciónⓘ de transistores por parámetros

 

RJK03M5DNS datasheet

 ..1. Size:125K  renesas
 rjk03m5dns.pdf pdf_icon

RJK03M5DNS

Preliminary Datasheet RJK03M5DNS R07DS0769EJ0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 29, 2012 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-

 6.1. Size:133K  renesas
 rjk03m5dpa.pdf pdf_icon

RJK03M5DNS

Preliminary Datasheet RJK03M5DPA 30V, 30A, 6.5m max. R07DS0770EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package name

 8.1. Size:181K  renesas
 rjk03m3dpa.pdf pdf_icon

RJK03M5DNS

Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9m max. R07DS0767EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam

 8.2. Size:148K  renesas
 rjk03m4dpa.pdf pdf_icon

RJK03M5DNS

Preliminary Datasheet RJK03M4DPA 30V, 35A, 4.6m max. R07DS0768EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 12, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PWSN0008DE-A (Package nam

MOSTRAR MÁS

Otros transistores... RJK0331DPB-00, RJK0331DPB-01, RJK0369DSP, RJK0371DSP, RJK03M1DPA, RJK03M2DPA, RJK03M3DPA, RJK03M4DPA, STP65NF06, RJK03M5DPA, RJK0406JPE, RJK0601DPN-E0, RJK0602DPN-E0, RJK0603DPN-E0, RJK0628JPE, RJK0629JPE, RJK0630JPE