Справочник MOSFET. RJK03M5DNS

 

RJK03M5DNS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK03M5DNS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10.4 nC
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0063 Ohm
   Тип корпуса: HWSON-8

 Аналог (замена) для RJK03M5DNS

 

 

RJK03M5DNS Datasheet (PDF)

 ..1. Size:125K  renesas
 rjk03m5dns.pdf

RJK03M5DNS RJK03M5DNS

Preliminary Datasheet RJK03M5DNS R07DS0769EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 29, 2012Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

 6.1. Size:133K  renesas
 rjk03m5dpa.pdf

RJK03M5DNS RJK03M5DNS

Preliminary Datasheet RJK03M5DPA 30V, 30A, 6.5mmax. R07DS0770EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package name

 8.1. Size:181K  renesas
 rjk03m3dpa.pdf

RJK03M5DNS RJK03M5DNS

Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9mmax. R07DS0767EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

 8.2. Size:148K  renesas
 rjk03m4dpa.pdf

RJK03M5DNS RJK03M5DNS

Preliminary Datasheet RJK03M4DPA 30V, 35A, 4.6mmax. R07DS0768EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

 8.3. Size:151K  renesas
 rjk03m2dpa.pdf

RJK03M5DNS RJK03M5DNS

Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mmax. R07DS0766EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

 8.4. Size:133K  renesas
 rjk03m1dpa.pdf

RJK03M5DNS RJK03M5DNS

Preliminary Datasheet RJK03M1DPA 30V, 50A, 2.3mmax. R07DS0765EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 08, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top