RJK03M5DPA Todos los transistores

 

RJK03M5DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK03M5DPA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: WPAK
     - Selección de transistores por parámetros

 

RJK03M5DPA Datasheet (PDF)

 ..1. Size:133K  renesas
 rjk03m5dpa.pdf pdf_icon

RJK03M5DPA

Preliminary Datasheet RJK03M5DPA 30V, 30A, 6.5mmax. R07DS0770EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package name

 6.1. Size:125K  renesas
 rjk03m5dns.pdf pdf_icon

RJK03M5DPA

Preliminary Datasheet RJK03M5DNS R07DS0769EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 29, 2012Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

 8.1. Size:181K  renesas
 rjk03m3dpa.pdf pdf_icon

RJK03M5DPA

Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9mmax. R07DS0767EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

 8.2. Size:148K  renesas
 rjk03m4dpa.pdf pdf_icon

RJK03M5DPA

Preliminary Datasheet RJK03M4DPA 30V, 35A, 4.6mmax. R07DS0768EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KI2325DS | RSD046P05FRA | CS6N120P

 

 
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