RJK0406JPE Todos los transistores

 ..1. Size:84K  renesas
 rjk0406jpe.pdf

Preliminary Datasheet RJK0406JPE R07DS0335EJ0200 Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Dec 19, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 1.65 m typ. High current devices ID = 160 A Low input capacitance Ciss = 6300 pF typ Outline RENESAS Package code PRSS0004AE-B (Packa

 9.1. Size:81K  renesas
 r07ds0073ej rjk0451dpb.pdf

Preliminary Datasheet RJK0451DPB R07DS0073EJ0102 (Previous REJ03G1763-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 9.2. Size:129K  renesas
 rej03g1877 rjk0454dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:132K  renesas
 rej03g1879 rjk0456dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:81K  renesas
 r07ds0075ej rjk0453dpb.pdf

Preliminary Datasheet RJK0453DPB R07DS0075EJ0102 (Previous REJ03G1762-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 1.9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 9.5. Size:81K  renesas
 r07ds0074ej rjk0452dpb.pdf

Preliminary Datasheet RJK0452DPB R07DS0074EJ0102 (Previous REJ03G1764-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 2.8 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 9.6. Size:132K  renesas
 rej03g1878 rjk0455dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.