RJK0406JPE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RJK0406JPE
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 192 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 160 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 155 nC
trⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 2200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: LDPAK
Аналог (замена) для RJK0406JPE
RJK0406JPE Datasheet (PDF)
rjk0406jpe.pdf
Preliminary Datasheet RJK0406JPE R07DS0335EJ0200Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Dec 19, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 1.65 m typ. High current devices : ID = 160 A Low input capacitance : Ciss = 6300 pF typ Outline RENESAS Package code: PRSS0004AE-B(Packa
r07ds0073ej rjk0451dpb.pdf
Preliminary Datasheet RJK0451DPB R07DS0073EJ0102(Previous: REJ03G1763-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack
rej03g1877 rjk0454dpbds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1879 rjk0456dpbds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0075ej rjk0453dpb.pdf
Preliminary Datasheet RJK0453DPB R07DS0075EJ0102(Previous: REJ03G1762-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 1.9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack
r07ds0074ej rjk0452dpb.pdf
Preliminary Datasheet RJK0452DPB R07DS0074EJ0102(Previous: REJ03G1764-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 2.8 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack
rej03g1878 rjk0455dpbds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918