PHX3N40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PHX3N40E Datasheet (PDF)

..1. Size:63K philips
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Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 1.7 Ag Isolated packageRDS(ON) 3.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

9.1. Size:73K philips
phx3n60e.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistors PHX3N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.7 Ag Isolated packageRDS(ON) 4.4 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

9.2. Size:72K philips
phx3n50e.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistors PHX3N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2.1 Ag Isolated packageRDS(ON) 3 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan

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