PHX3N40E MOSFET. Datasheet pdf. Equivalent
Type Designator: PHX3N40E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT186A
PHX3N40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHX3N40E Datasheet (PDF)
phx3n40e 3.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 1.7 Ag Isolated packageRDS(ON) 3.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh
phx3n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX3N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.7 Ag Isolated packageRDS(ON) 4.4 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh
phx3n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX3N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2.1 Ag Isolated packageRDS(ON) 3 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan
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