RJK0631JPR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK0631JPR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1 V
Carga de la puerta (Qg): 32 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 360 pF
Resistencia entre drenaje y fuente RDS(on): 0.015 Ohm
Paquete / Cubierta: TO-220FM
Búsqueda de reemplazo de MOSFET RJK0631JPR
RJK0631JPR Datasheet (PDF)
rjk0631jpr.pdf
Preliminary Datasheet RJK0631JPR R07DS0879EJ030060 V - 30 A - N Channel Power MOS FET Rev.3.00Jul 24, 2013High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ Outline RENESAS Package code: PRSS0003AD-A(Pac
rjk0631jpd.pdf
Preliminary Datasheet RJK0631JPD R07DS0252EJ0300Silicon N Channel Power MOS FET Rev.3.00High Speed Power Switching Jul 24, 2013Features For Automotive application Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ AEC-Q101 compliant Outline RENESAS Package code: PRSS0004ZD-C(Package n
rjk0631jpe.pdf
RJK0631JPE R07DS0341JJ0500NMOS FET Rev.5.00 2013.07.24 AEC-Q101 RDS(on) = 12 m typ. (4.5 V) Ciss = 1350 pF typ : PRSS0004AE-B( : LDPAK (S)-(
rjk0632jpd.pdf
Preliminary Datasheet RJK0632JPD R07DS0342EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 11, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 29 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 440 pF typ. Outline RENESAS Package code: PRSS0004ZD-C(Package name:
rjk0636jpd.pdf
Preliminary Datasheet RJK0636JPD R07DS0365EJ020060 V - 25 A - N Channel Power MOS FET Rev.2.00High Speed Power Switching Aug 29, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 18 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 750 pF typ Outline RENESAS Package code: PRSS0004ZD-C(Pa
rjk0630jpe.pdf
Preliminary Datasheet RJK0630JPE R07DS0340EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Apr 18, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 6.2 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 2100 pF typ. Outline RENESAS Package code: PRSS0004AE-B(Package name
rjk0632jpd.pdf
RJK0632JPDwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
