RJK0631JPR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RJK0631JPR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 30 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Минимальное напряжение отсечки |Vgs(off)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 32 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 360 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
Тип корпуса: TO-220FM
Аналог (замена) для RJK0631JPR
RJK0631JPR Datasheet (PDF)
rjk0631jpr.pdf
Preliminary Datasheet RJK0631JPR R07DS0879EJ030060 V - 30 A - N Channel Power MOS FET Rev.3.00Jul 24, 2013High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ Outline RENESAS Package code: PRSS0003AD-A(Pac
rjk0631jpd.pdf
Preliminary Datasheet RJK0631JPD R07DS0252EJ0300Silicon N Channel Power MOS FET Rev.3.00High Speed Power Switching Jul 24, 2013Features For Automotive application Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ AEC-Q101 compliant Outline RENESAS Package code: PRSS0004ZD-C(Package n
rjk0631jpe.pdf
RJK0631JPE R07DS0341JJ0500NMOS FET Rev.5.00 2013.07.24 AEC-Q101 RDS(on) = 12 m typ. (4.5 V) Ciss = 1350 pF typ : PRSS0004AE-B( : LDPAK (S)-(
rjk0632jpd.pdf
Preliminary Datasheet RJK0632JPD R07DS0342EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 11, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 29 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 440 pF typ. Outline RENESAS Package code: PRSS0004ZD-C(Package name:
rjk0636jpd.pdf
Preliminary Datasheet RJK0636JPD R07DS0365EJ020060 V - 25 A - N Channel Power MOS FET Rev.2.00High Speed Power Switching Aug 29, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 18 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 750 pF typ Outline RENESAS Package code: PRSS0004ZD-C(Pa
rjk0630jpe.pdf
Preliminary Datasheet RJK0630JPE R07DS0340EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Apr 18, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 6.2 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 2100 pF typ. Outline RENESAS Package code: PRSS0004AE-B(Package name
rjk0632jpd.pdf
RJK0632JPDwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: OSG65R099FZF
