RJK0632JPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RJK0632JPD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: DPAK

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RJK0632JPD Datasheet (PDF)

..1. Size:116K renesas
rjk0632jpd.pdf

Preliminary Datasheet RJK0632JPD R07DS0342EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 11, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 29 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 440 pF typ. Outline RENESAS Package code: PRSS0004ZD-C(Package name:

..2. Size:806K cn vbsemi
rjk0632jpd.pdf

RJK0632JPDwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

8.1. Size:90K renesas
rjk0631jpd.pdf

Preliminary Datasheet RJK0631JPD R07DS0252EJ0300Silicon N Channel Power MOS FET Rev.3.00High Speed Power Switching Jul 24, 2013Features For Automotive application Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ AEC-Q101 compliant Outline RENESAS Package code: PRSS0004ZD-C(Package n

8.2. Size:90K renesas
rjk0631jpr.pdf

Preliminary Datasheet RJK0631JPR R07DS0879EJ030060 V - 30 A - N Channel Power MOS FET Rev.3.00Jul 24, 2013High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ Outline RENESAS Package code: PRSS0003AD-A(Pac

8.3. Size:153K renesas
rjk0631jpe.pdf

RJK0631JPE R07DS0341JJ0500NMOS FET Rev.5.00 2013.07.24 AEC-Q101 RDS(on) = 12 m typ. (4.5 V) Ciss = 1350 pF typ : PRSS0004AE-B( : LDPAK (S)-(

8.4. Size:85K renesas
rjk0636jpd.pdf

Preliminary Datasheet RJK0636JPD R07DS0365EJ020060 V - 25 A - N Channel Power MOS FET Rev.2.00High Speed Power Switching Aug 29, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 18 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 750 pF typ Outline RENESAS Package code: PRSS0004ZD-C(Pa

8.5. Size:112K renesas
rjk0630jpe.pdf

Preliminary Datasheet RJK0630JPE R07DS0340EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Apr 18, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 6.2 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 2100 pF typ. Outline RENESAS Package code: PRSS0004AE-B(Package name

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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