RJK0632JPD Todos los transistores

 

RJK0632JPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK0632JPD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: DPAK
 

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RJK0632JPD Datasheet (PDF)

 ..1. Size:116K  renesas
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RJK0632JPD

Preliminary Datasheet RJK0632JPD R07DS0342EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 11, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 29 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 440 pF typ. Outline RENESAS Package code: PRSS0004ZD-C(Package name:

 ..2. Size:806K  cn vbsemi
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RJK0632JPD

RJK0632JPDwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 8.1. Size:90K  renesas
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RJK0632JPD

Preliminary Datasheet RJK0631JPD R07DS0252EJ0300Silicon N Channel Power MOS FET Rev.3.00High Speed Power Switching Jul 24, 2013Features For Automotive application Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ AEC-Q101 compliant Outline RENESAS Package code: PRSS0004ZD-C(Package n

 8.2. Size:90K  renesas
 rjk0631jpr.pdf pdf_icon

RJK0632JPD

Preliminary Datasheet RJK0631JPR R07DS0879EJ030060 V - 30 A - N Channel Power MOS FET Rev.3.00Jul 24, 2013High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ Outline RENESAS Package code: PRSS0003AD-A(Pac

MOSTRAR MÁS

Otros transistores... RJK0602DPN-E0 , RJK0603DPN-E0 , RJK0628JPE , RJK0629JPE , RJK0630JPE , RJK0631JPD , RJK0631JPE , RJK0631JPR , MMD60R360PRH , RJK0636JPD , RJK0703DPN-E0 , RJK0703DPP-E0 , RJK1001DPP-E0 , RJK1002DPP-E0 , RJK1003DPN-E0 , RJK1003DPP-E0 , RJK1008DPP-E0 .

History: QM3303S

 

 
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