RJK0636JPD Todos los transistores

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 rjk0636jpd.pdf

Preliminary Datasheet RJK0636JPD R07DS0365EJ0200 60 V - 25 A - N Channel Power MOS FET Rev.2.00 High Speed Power Switching Aug 29, 2012 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 18 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 750 pF typ Outline RENESAS Package code PRSS0004ZD-C (Pa

 8.1. Size:90K  renesas
 rjk0631jpd.pdf

Preliminary Datasheet RJK0631JPD R07DS0252EJ0300 Silicon N Channel Power MOS FET Rev.3.00 High Speed Power Switching Jul 24, 2013 Features For Automotive application Low on-resistance RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 1350 pF typ AEC-Q101 compliant Outline RENESAS Package code PRSS0004ZD-C (Package n

 8.2. Size:90K  renesas
 rjk0631jpr.pdf

Preliminary Datasheet RJK0631JPR R07DS0879EJ0300 60 V - 30 A - N Channel Power MOS FET Rev.3.00 Jul 24, 2013 High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 1350 pF typ Outline RENESAS Package code PRSS0003AD-A (Pac

 8.3. Size:153K  renesas
 rjk0631jpe.pdf

RJK0631JPE R07DS0341JJ0500 N MOS FET Rev.5.00 2013.07.24 AEC-Q101 RDS(on) = 12 m typ. (4.5 V ) Ciss = 1350 pF typ PRSS0004AE-B ( LDPAK (S)-(

 8.4. Size:116K  renesas
 rjk0632jpd.pdf

Preliminary Datasheet RJK0632JPD R07DS0342EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 11, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 29 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 440 pF typ. Outline RENESAS Package code PRSS0004ZD-C (Package name

 8.5. Size:112K  renesas
 rjk0630jpe.pdf

Preliminary Datasheet RJK0630JPE R07DS0340EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 6.2 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 2100 pF typ. Outline RENESAS Package code PRSS0004AE-B (Package name

 8.6. Size:806K  cn vbsemi
 rjk0632jpd.pdf

RJK0632JPD www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise