RJK1001DPP-E0 Todos los transistores

 ..1. Size:75K  renesas
 rjk1001dpp-e0.pdf

Preliminary Datasheet RJK1001DPP-E0 R07DS0625EJ0200 N-Channel MOS FET Rev.2.00 100 V, 80 A, 5.5 m Oct 17, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Ab

 8.1. Size:75K  renesas
 rjk1002dpp-e0.pdf

Preliminary Datasheet RJK1002DPP-E0 R07DS0626EJ0200 N-Channel MOS FET Rev.2.00 100 V, 70 A, 7.6 m Oct 17, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Ab

 8.2. Size:120K  renesas
 rej03g1627 rjk1008dpnds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:82K  renesas
 rjk1008dpp-e0.pdf

Preliminary Datasheet RJK1008DPP-E0 R07DS0798EJ0100 N-Channel Power MOSFET Rev.1.00 Jun 08, 2012 High-Speed Switching Use Features VDSS 100 V RDS(on) 11 m (Max) ID 80 A Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) 2 D 1. Gate 2. Drain 1 G 3. Source 1 2 S 3 3 Application Motor control, Lighting control, Solenoid

 8.4. Size:120K  renesas
 rej03g1708 rjk1008dppds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:74K  renesas
 rjk1003dpn-e0.pdf

Preliminary Datasheet RJK1003DPN-E0 R07DS0621EJ0200 N-Channel MOS FET Rev.2.00 100 V, 50 A, 11 m Aug 24, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code PRSS0004AG-A (Package name TO-220AB) 4 2, 4 D 1. Gate 2. Drain 1 G 3. Source 4. D

 8.6. Size:122K  renesas
 rej03g1629 rjk1008dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:75K  renesas
 rjk1003dpp-e0.pdf

Preliminary Datasheet RJK1003DPP-E0 R07DS0627EJ0200 N-Channel MOS FET Rev.2.00 100 V, 50 A, 11 m Oct 17, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Abs