All MOSFET. RJK1001DPP-E0 Equivalents Search

Preliminary Datasheet RJK1001DPP-E0 R07DS0625EJ0200 N-Channel MOS FET Rev.2.00 100 V, 80 A, 5.5 m Oct 17, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Ab... See More ⇒

Preliminary Datasheet RJK1002DPP-E0 R07DS0626EJ0200 N-Channel MOS FET Rev.2.00 100 V, 70 A, 7.6 m Oct 17, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Ab... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Datasheet RJK1008DPP-E0 R07DS0798EJ0100 N-Channel Power MOSFET Rev.1.00 Jun 08, 2012 High-Speed Switching Use Features VDSS 100 V RDS(on) 11 m (Max) ID 80 A Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) 2 D 1. Gate 2. Drain 1 G 3. Source 1 2 S 3 3 Application Motor control, Lighting control, Solenoid ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Datasheet RJK1003DPN-E0 R07DS0621EJ0200 N-Channel MOS FET Rev.2.00 100 V, 50 A, 11 m Aug 24, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code PRSS0004AG-A (Package name TO-220AB) 4 2, 4 D 1. Gate 2. Drain 1 G 3. Source 4. D... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Preliminary Datasheet RJK1003DPP-E0 R07DS0627EJ0200 N-Channel MOS FET Rev.2.00 100 V, 50 A, 11 m Oct 17, 2012 Features High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at VGS = 10 V) Package TO-220FP Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Abs... See More ⇒