RJK1206JPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RJK1206JPD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2.5 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET RJK1206JPD

RJK1206JPD Datasheet (PDF)

..1. Size:88K renesas
rjk1206jpd.pdf

Preliminary Datasheet RJK1206JPD R07DS0690EJ0300120 V - 30 A - N Channel Power MOS FET Rev.3.00High Speed Power Switching May 23, 2013Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 41 m typ. Low input capacitance: Ciss = 1600 pF typ Outline RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (S))2, 4D4

8.1. Size:87K renesas
rjk1209jpe.pdf

Preliminary Datasheet RJK1209JPE R07DS0691EJ0100120V - 80A - N Channel Power MOS FET Rev.1.00High Speed Power Switching Mar 08, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 14 m typ. Low input capacitance: Ciss = 4600 pF typ Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )2, 4D

9.1. Size:108K renesas
r07ds0089ej rjk1211dpa.pdf

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300Silicon N Channel Power MOS FET Rev.3.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

9.2. Size:149K renesas
r07ds0091ej rjk1212dpa.pdf

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

9.3. Size:125K renesas
r07ds0092ej rjk1212dns.pdf

Preliminary Datasheet RJK1212DNS R07DS0092EJ0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Jun 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

9.4. Size:95K renesas
r07ds0090ej rjk1211dns.pdf

Preliminary Datasheet RJK1211DNS R07DS0090EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Jan 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: