RJK1206JPD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK1206JPD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: DPAK

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RJK1206JPD datasheet

 ..1. Size:88K  renesas
 rjk1206jpd.pdf pdf_icon

RJK1206JPD

Preliminary Datasheet RJK1206JPD R07DS0690EJ0300 120 V - 30 A - N Channel Power MOS FET Rev.3.00 High Speed Power Switching May 23, 2013 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 41 m typ. Low input capacitance Ciss = 1600 pF typ Outline RENESAS Package code PRSS0004ZD-C (Package name DPAK (S)) 2, 4 D 4

 8.1. Size:87K  renesas
 rjk1209jpe.pdf pdf_icon

RJK1206JPD

Preliminary Datasheet RJK1209JPE R07DS0691EJ0100 120V - 80A - N Channel Power MOS FET Rev.1.00 High Speed Power Switching Mar 08, 2012 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 14 m typ. Low input capacitance Ciss = 4600 pF typ Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) 2, 4 D

 9.1. Size:108K  renesas
 r07ds0089ej rjk1211dpa.pdf pdf_icon

RJK1206JPD

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300 Silicon N Channel Power MOS FET Rev.3.00 Power Switching Apr 11, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B

 9.2. Size:149K  renesas
 r07ds0091ej rjk1212dpa.pdf pdf_icon

RJK1206JPD

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 11, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B

MOSTRAR MÁS

Otros transistores... RJK0636JPD, RJK0703DPN-E0, RJK0703DPP-E0, RJK1001DPP-E0, RJK1002DPP-E0, RJK1003DPN-E0, RJK1003DPP-E0, RJK1008DPP-E0, IRF3205, RJK1209JPE, RJK1525DPJ, RJK1525DPP-M0, RJK1535DPF, RJK1535DPJ, RJK1575DPA, RJK1576DPA, RJK1590DP3-A0