RJK1206JPD - параметры транзистора MOSFET, его аналоги, datasheet

RJK1206JPD Datasheet (PDF)

..1. Size:88K renesas
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Preliminary Datasheet RJK1206JPD R07DS0690EJ0300120 V - 30 A - N Channel Power MOS FET Rev.3.00High Speed Power Switching May 23, 2013Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 41 m typ. Low input capacitance: Ciss = 1600 pF typ Outline RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (S))2, 4D4

8.1. Size:87K renesas
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Preliminary Datasheet RJK1209JPE R07DS0691EJ0100120V - 80A - N Channel Power MOS FET Rev.1.00High Speed Power Switching Mar 08, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 14 m typ. Low input capacitance: Ciss = 4600 pF typ Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )2, 4D

9.1. Size:108K renesas
r07ds0089ej rjk1211dpa.pdf pdf_icon

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300Silicon N Channel Power MOS FET Rev.3.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

9.2. Size:149K renesas
r07ds0091ej rjk1212dpa.pdf pdf_icon

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B