RJK1209JPE Todos los transistores

 

RJK1209JPE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK1209JPE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: LDPAK
 

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RJK1209JPE Datasheet (PDF)

 ..1. Size:87K  renesas
 rjk1209jpe.pdf pdf_icon

RJK1209JPE

Preliminary Datasheet RJK1209JPE R07DS0691EJ0100120V - 80A - N Channel Power MOS FET Rev.1.00High Speed Power Switching Mar 08, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 14 m typ. Low input capacitance: Ciss = 4600 pF typ Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )2, 4D

 8.1. Size:88K  renesas
 rjk1206jpd.pdf pdf_icon

RJK1209JPE

Preliminary Datasheet RJK1206JPD R07DS0690EJ0300120 V - 30 A - N Channel Power MOS FET Rev.3.00High Speed Power Switching May 23, 2013Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 41 m typ. Low input capacitance: Ciss = 1600 pF typ Outline RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (S))2, 4D4

 9.1. Size:108K  renesas
 r07ds0089ej rjk1211dpa.pdf pdf_icon

RJK1209JPE

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300Silicon N Channel Power MOS FET Rev.3.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 9.2. Size:149K  renesas
 r07ds0091ej rjk1212dpa.pdf pdf_icon

RJK1209JPE

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

MOSTRAR MÁS

Otros transistores... RJK0703DPN-E0 , RJK0703DPP-E0 , RJK1001DPP-E0 , RJK1002DPP-E0 , RJK1003DPN-E0 , RJK1003DPP-E0 , RJK1008DPP-E0 , RJK1206JPD , IRF740 , RJK1525DPJ , RJK1525DPP-M0 , RJK1535DPF , RJK1535DPJ , RJK1575DPA , RJK1576DPA , RJK1590DP3-A0 , RJK2061JPE .

History: STW55NM50N

 

 
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