Preliminary Datasheet RJK1209JPE R07DS0691EJ0100120V - 80A - N Channel Power MOS FET Rev.1.00High Speed Power Switching Mar 08, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 14 m typ. Low input capacitance: Ciss = 4600 pF typ Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )2, 4D

Preliminary Datasheet RJK1206JPD R07DS0690EJ0300120 V - 30 A - N Channel Power MOS FET Rev.3.00High Speed Power Switching May 23, 2013Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 41 m typ. Low input capacitance: Ciss = 1600 pF typ Outline RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (S))2, 4D4

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300Silicon N Channel Power MOS FET Rev.3.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

Preliminary Datasheet RJK1212DNS R07DS0092EJ0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Jun 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

Preliminary Datasheet RJK1211DNS R07DS0090EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Jan 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-