RJK4002DJE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK4002DJE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.54 W
Voltaje máximo drenador - fuente |Vds|: 400 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 1.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 3.5 V
Carga de la puerta (Qg): 6 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 25 pF
Resistencia entre drenaje y fuente RDS(on): 2.9 Ohm
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de MOSFET RJK4002DJE
RJK4002DJE Datasheet (PDF)
rjk4002dje.pdf
Preliminary Datasheet RJK4002DJE R07DS0842EJ0200400V - 3A - MOS FET Rev.2.00High Speed Power Switching Aug 03, 2012Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321Absolute Max
rjk4002dpd.pdf
Preliminary Datasheet RJK4002DPD R07DS0835EJ0210400V - 3A - MOS FET Rev.2.10High Speed Power Switching Jan 29, 2014Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source1
r07ds0551ej rjk4002dpp.pdf
Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Oct 03, 2011Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbso
r07ds0228ej rjk4006dpp.pdf
Preliminary Datasheet RJK4006DPP-M0 R07DS0228EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 14, 2010Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source
rej03g1547 rjk4006dpdds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0229ej rjk4007dpp.pdf
Preliminary Datasheet RJK4007DPP-M0 R07DS0229EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 15, 2010Features Low on-resistance RDS(on) = 0.47 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Sourc
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