RJK4034DJE Todos los transistores

 ..1. Size:74K  renesas
 rjk4034dje.pdf

Preliminary Datasheet RJK4034DJE R07DS0864EJ0100 400V - 1.6A - MOS FET Rev.1.00 High Speed Power Switching Aug 10, 2012 Features Low on-state resistance RDS(on) = 3.7 typ. (at ID = 0.8 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate

 9.1. Size:91K  renesas
 rej03g1590 rjk4015dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:117K  renesas
 rej03g1513 rjk4013dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:84K  renesas
 rjk4002dje.pdf

Preliminary Datasheet RJK4002DJE R07DS0842EJ0200 400V - 3A - MOS FET Rev.2.00 High Speed Power Switching Aug 03, 2012 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1 Absolute Max

 9.4. Size:79K  renesas
 r07ds0228ej rjk4006dpp.pdf

Preliminary Datasheet RJK4006DPP-M0 R07DS0228EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source

 9.5. Size:87K  renesas
 rej03g1575 rjk4012dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:94K  renesas
 rjk4002dpd.pdf

Preliminary Datasheet RJK4002DPD R07DS0835EJ0210 400V - 3A - MOS FET Rev.2.10 High Speed Power Switching Jan 29, 2014 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1

 9.7. Size:116K  renesas
 rej03g1547 rjk4006dpdds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:78K  renesas
 r07ds0551ej rjk4002dpp.pdf

Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 03, 2011 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Abso

 9.9. Size:88K  renesas
 rej03g1576 rjk4014dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:79K  renesas
 r07ds0215ej rjk4018dpk.pdf

Preliminary Datasheet RJK4018DPK R07DS0215EJ0200 (Previous REJ03G1490-0100) Silicon N Channel MOS FET Rev2.00 High Speed Power Switching Dec 03, 2010 Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Ga

 9.11. Size:76K  renesas
 r07ds0229ej rjk4007dpp.pdf

Preliminary Datasheet RJK4007DPP-M0 R07DS0229EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 15, 2010 Features Low on-resistance RDS(on) = 0.47 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Sourc