RJK4034DJE. Аналоги и основные параметры
Наименование производителя: RJK4034DJE
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 0.9 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 18 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
Тип корпуса: TO-92
Аналог (замена) для RJK4034DJE
- подборⓘ MOSFET транзистора по параметрам
RJK4034DJE даташит
..1. Size:74K renesas
rjk4034dje.pdf 

Preliminary Datasheet RJK4034DJE R07DS0864EJ0100 400V - 1.6A - MOS FET Rev.1.00 High Speed Power Switching Aug 10, 2012 Features Low on-state resistance RDS(on) = 3.7 typ. (at ID = 0.8 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate
9.1. Size:91K renesas
rej03g1590 rjk4015dpkds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.2. Size:117K renesas
rej03g1513 rjk4013dpeds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.3. Size:84K renesas
rjk4002dje.pdf 

Preliminary Datasheet RJK4002DJE R07DS0842EJ0200 400V - 3A - MOS FET Rev.2.00 High Speed Power Switching Aug 03, 2012 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1 Absolute Max
9.4. Size:79K renesas
r07ds0228ej rjk4006dpp.pdf 

Preliminary Datasheet RJK4006DPP-M0 R07DS0228EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source
9.5. Size:87K renesas
rej03g1575 rjk4012dpeds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.6. Size:94K renesas
rjk4002dpd.pdf 

Preliminary Datasheet RJK4002DPD R07DS0835EJ0210 400V - 3A - MOS FET Rev.2.10 High Speed Power Switching Jan 29, 2014 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1
9.7. Size:116K renesas
rej03g1547 rjk4006dpdds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.8. Size:78K renesas
r07ds0551ej rjk4002dpp.pdf 

Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 03, 2011 Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Abso
9.9. Size:88K renesas
rej03g1576 rjk4014dpkds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.10. Size:79K renesas
r07ds0215ej rjk4018dpk.pdf 

Preliminary Datasheet RJK4018DPK R07DS0215EJ0200 (Previous REJ03G1490-0100) Silicon N Channel MOS FET Rev2.00 High Speed Power Switching Dec 03, 2010 Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Ga
9.11. Size:76K renesas
r07ds0229ej rjk4007dpp.pdf 

Preliminary Datasheet RJK4007DPP-M0 R07DS0229EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 15, 2010 Features Low on-resistance RDS(on) = 0.47 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Sourc
Другие IGBT... RJK1576DPA, RJK1590DP3-A0, RJK2061JPE, RJK2062JPK, RJK2075DPA, RJK2076DPA, RJK4002DJE, RJK4002DPD, AO3400, RJK4502DJE, RJK4502DPD, RJK4512DPP-E0, RJK4532DPD, RJK4532DPH-E0, RJK5002DJE, RJK5002DPD, RJK5013DPP-E0