Справочник MOSFET. RJK4034DJE

 

RJK4034DJE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK4034DJE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 18 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
   Тип корпуса: TO-92

 Аналог (замена) для RJK4034DJE

 

 

RJK4034DJE Datasheet (PDF)

 ..1. Size:74K  renesas
rjk4034dje.pdf

RJK4034DJE
RJK4034DJE

Preliminary Datasheet RJK4034DJE R07DS0864EJ0100400V - 1.6A - MOS FET Rev.1.00High Speed Power Switching Aug 10, 2012Features Low on-state resistance RDS(on) = 3.7 typ. (at ID = 0.8 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. Gate

 9.1. Size:91K  renesas
rej03g1590 rjk4015dpkds.pdf

RJK4034DJE
RJK4034DJE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:117K  renesas
rej03g1513 rjk4013dpeds.pdf

RJK4034DJE
RJK4034DJE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:84K  renesas
rjk4002dje.pdf

RJK4034DJE
RJK4034DJE

Preliminary Datasheet RJK4002DJE R07DS0842EJ0200400V - 3A - MOS FET Rev.2.00High Speed Power Switching Aug 03, 2012Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321Absolute Max

 9.4. Size:79K  renesas
r07ds0228ej rjk4006dpp.pdf

RJK4034DJE
RJK4034DJE

Preliminary Datasheet RJK4006DPP-M0 R07DS0228EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 14, 2010Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source

 9.5. Size:87K  renesas
rej03g1575 rjk4012dpeds.pdf

RJK4034DJE
RJK4034DJE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:94K  renesas
rjk4002dpd.pdf

RJK4034DJE
RJK4034DJE

Preliminary Datasheet RJK4002DPD R07DS0835EJ0210400V - 3A - MOS FET Rev.2.10High Speed Power Switching Jan 29, 2014Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source1

 9.7. Size:116K  renesas
rej03g1547 rjk4006dpdds.pdf

RJK4034DJE
RJK4034DJE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:78K  renesas
r07ds0551ej rjk4002dpp.pdf

RJK4034DJE
RJK4034DJE

Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Oct 03, 2011Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbso

 9.9. Size:88K  renesas
rej03g1576 rjk4014dpkds.pdf

RJK4034DJE
RJK4034DJE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:79K  renesas
r07ds0215ej rjk4018dpk.pdf

RJK4034DJE
RJK4034DJE

Preliminary Datasheet RJK4018DPK R07DS0215EJ0200(Previous: REJ03G1490-0100)Silicon N Channel MOS FET Rev2.00High Speed Power Switching Dec 03, 2010Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Ga

 9.11. Size:76K  renesas
r07ds0229ej rjk4007dpp.pdf

RJK4034DJE
RJK4034DJE

Preliminary Datasheet RJK4007DPP-M0 R07DS0229EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 15, 2010Features Low on-resistance RDS(on) = 0.47 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Sourc

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