PHX4N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHX4N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: SOT186A

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PHX4N60E datasheet

 ..1. Size:83K  philips
 phx4n60e.pdf pdf_icon

PHX4N60E

Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.4 A g Isolated package RDS(ON) 2.5 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

 9.1. Size:24K  philips
 phx4n50e 1.pdf pdf_icon

PHX4N60E

Philips Semiconductors Objective specification PowerMOS transistor PHX4N50E Isolated version of PHP4N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack, plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 2.9 A blocking volt

 9.2. Size:72K  philips
 phx4nd40e.pdf pdf_icon

PHX4N60E

Philips Semiconductors Product specification PowerMOS transistors PHX4ND40E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 400 V Fast switching Stable off-state characteristics ID = 2.7 A High thermal cycling performance g Isolated package RDS(ON) 1.8 Fast reverse recovery diode trr = 180 ns

Otros transistores... PHW8N50E, PHW8ND50E, PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E, PHX3N50E, PHX3N60E, IRLZ44N, PHX4ND40E, PHX6N60E, PHX6NA60E, PHX6ND50E, PHX7N60E, PHX8N50E, PHX8ND50E, PMBF4391