PHX4N60E MOSFET. Datasheet pdf. Equivalent
Type Designator: PHX4N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: SOT186A
PHX4N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHX4N60E Datasheet (PDF)
phx4n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.4 Ag Isolated packageRDS(ON) 2.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh
phx4n50e 1.pdf
Philips Semiconductors Objective specification PowerMOS transistor PHX4N50E Isolated version of PHP4N50EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 2.9 Ablocking volt
phx4nd40e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX4ND40E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 400 V Fast switching Stable off-state characteristics ID = 2.7 A High thermal cycling performanceg Isolated package RDS(ON) 1.8 Fast reverse recovery diodetrr = 180 ns
Datasheet: PHW8N50E , PHW8ND50E , PHW9N60E , PHX2N50E , PHX2N60E , PHX3N40E , PHX3N50E , PHX3N60E , IRF640N , PHX4ND40E , PHX6N60E , PHX6NA60E , PHX6ND50E , PHX7N60E , PHX8N50E , PHX8ND50E , PMBF4391 .
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