RJK6032DPH-E0 Todos los transistores

 

RJK6032DPH-E0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK6032DPH-E0

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40.3 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 9 nC

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 31 pF

Resistencia drenaje-fuente RDS(on): 4.3 Ohm

Empaquetado / Estuche: TO-251

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RJK6032DPH-E0 Datasheet (PDF)

1.1. rjk6032dph-e0.pdf Size:90K _renesas

RJK6032DPH-E0
RJK6032DPH-E0

 Preliminary Datasheet RJK6032DPH-E0 R07DS0993EJ0100 600V - 3A - MOS FET Rev.1.00 High Speed Power Switching Jan 23, 2013 Features  Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) D 4 1. Gate 2. Drain G 3. Source 4.

4.1. rjk6036dp3-a0.pdf Size:61K _renesas

RJK6032DPH-E0
RJK6032DPH-E0

Preliminary Datasheet RJK6036DP3-A0 R07DS0841EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting Outline RENESAS Package code: PRSP0004ZB-A Package name: SOT-223 D 4 1. Gate 2. Drain G 3 3. Source 2 4.

4.2. r07ds0553ej rjk6034dpd.pdf Size:76K _renesas

RJK6032DPH-E0
RJK6032DPH-E0

Preliminary Datasheet RJK6034DPD-E0 R07DS0553EJ0100 600 V - 1 A - MOS FET Rev.1.00 High Speed Power Switching Oct 13, 2011 Features ? Low on-resistance RDS(on) = 9.8 ? typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004ZJ-A D (Package name : TO-252) 4 1. Gate 2. Drain G 3. Source 1 2 4. Dr

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