RJK6032DPH-E0 Todos los transistores

 

RJK6032DPH-E0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK6032DPH-E0
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 31 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.3 Ohm
   Paquete / Cubierta: TO-251
 

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RJK6032DPH-E0 Datasheet (PDF)

 ..1. Size:90K  renesas
 rjk6032dph-e0.pdf pdf_icon

RJK6032DPH-E0

Preliminary Datasheet RJK6032DPH-E0 R07DS0993EJ0100600V - 3A - MOS FET Rev.1.00High Speed Power Switching Jan 23, 2013Features Low on-resistance RDS(on) = 3.3 typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4.

 8.1. Size:81K  1
 rjk6035dpp-e0.pdf pdf_icon

RJK6032DPH-E0

Preliminary Datasheet RJK6035DPP-E0 R07DS0616EJ0100600V - 6A - MOS FET Rev.1.00High Speed Power Switching Feb 24, 2012Features Low on-resistance RDS(on) = 1.1 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S

 8.2. Size:61K  renesas
 rjk6036dp3-a0.pdf pdf_icon

RJK6032DPH-E0

Preliminary DatasheetRJK6036DP3-A0 R07DS0841EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2011Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSP0004ZB-APackage name: SOT-223D41. Gate2. DrainG3 3. Source24.

 8.3. Size:76K  renesas
 r07ds0553ej rjk6034dpd.pdf pdf_icon

RJK6032DPH-E0

Preliminary Datasheet RJK6034DPD-E0 R07DS0553EJ0100600 V - 1 A - MOS FET Rev.1.00High Speed Power Switching Oct 13, 2011Features Low on-resistance RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZJ-AD(Package name : TO-252)41. Gate2. DrainG3. Source

MOSTRAR MÁS

Otros transistores... RJK5014DPP-E0 , RJK5032DPD , RJK5032DPH-E0 , RJK6002DJE , RJK6002DPH-E0 , RJK6013DPP-E0 , RJK6024DP3-A0 , RJK6025DPH-E0 , IRF4905 , RJK6036DP3-A0 , RJL5012DPP , RJL5013DPP , RJL5014DPP , RJL6012DPP , RJL6013DPP , RJL6014DPP , RJM0404JSC .

History: IPD031N03L

 

 
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