PHX6N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHX6N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Id|ⓘ - Corriente continua de drenaje: 2.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
Paquete / Cubierta: SOT186A
- Selección de transistores por parámetros
PHX6N60E Datasheet (PDF)
phx6n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Isolated packageRDS(ON) 1.8 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh
phx6nd50e 2.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 3.1 A High thermal cycling performanceg Isolated package RDS(ON) 1.5 Fast reverse recovery diodetrr = 180 ns
phx6na60e.pdf

Philips Semiconductors Objective specification PowerMOS transistors PHX6NA60E Low capacitance Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Low feedback capacitance Stable off-state characteristics ID = 3.9 Ag High thermal cycling performance Low thermal resistance RDS(ON) 1.2
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PE506BA | NCE0224AK | F5F50VX2 | 2SK815 | UF630G-TN3-R | IRC833A
History: PE506BA | NCE0224AK | F5F50VX2 | 2SK815 | UF630G-TN3-R | IRC833A



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