PHX6N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHX6N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm

Encapsulados: SOT186A

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PHX6N60E datasheet

 ..1. Size:69K  philips
 phx6n60e.pdf pdf_icon

PHX6N60E

Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 A g Isolated package RDS(ON) 1.8 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

 9.1. Size:60K  philips
 phx6nd50e 2.pdf pdf_icon

PHX6N60E

Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 3.1 A High thermal cycling performance g Isolated package RDS(ON) 1.5 Fast reverse recovery diode trr = 180 ns

 9.2. Size:25K  philips
 phx6na60e.pdf pdf_icon

PHX6N60E

Philips Semiconductors Objective specification PowerMOS transistors PHX6NA60E Low capacitance Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Low feedback capacitance Stable off-state characteristics ID = 3.9 A g High thermal cycling performance Low thermal resistance RDS(ON) 1.2

Otros transistores... PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E, PHX3N50E, PHX3N60E, PHX4N60E, PHX4ND40E, IRF640N, PHX6NA60E, PHX6ND50E, PHX7N60E, PHX8N50E, PHX8ND50E, PMBF4391, PMBF4392, PMBF4393