PHX6N60E Specs and Replacement

Type Designator: PHX6N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: SOT186A

PHX6N60E substitution

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PHX6N60E datasheet

 ..1. Size:69K  philips
 phx6n60e.pdf pdf_icon

PHX6N60E

Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 A g Isolated package RDS(ON) 1.8 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh... See More ⇒

 9.1. Size:60K  philips
 phx6nd50e 2.pdf pdf_icon

PHX6N60E

Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 3.1 A High thermal cycling performance g Isolated package RDS(ON) 1.5 Fast reverse recovery diode trr = 180 ns... See More ⇒

 9.2. Size:25K  philips
 phx6na60e.pdf pdf_icon

PHX6N60E

Philips Semiconductors Objective specification PowerMOS transistors PHX6NA60E Low capacitance Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Low feedback capacitance Stable off-state characteristics ID = 3.9 A g High thermal cycling performance Low thermal resistance RDS(ON) 1.2 ... See More ⇒

Detailed specifications: PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E, PHX3N50E, PHX3N60E, PHX4N60E, PHX4ND40E, IRF640N, PHX6NA60E, PHX6ND50E, PHX7N60E, PHX8N50E, PHX8ND50E, PMBF4391, PMBF4392, PMBF4393

Keywords - PHX6N60E MOSFET specs

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