All MOSFET. PHX6N60E Datasheet

 

PHX6N60E Datasheet and Replacement


   Type Designator: PHX6N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: SOT186A
 

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PHX6N60E Datasheet (PDF)

 ..1. Size:69K  philips
 phx6n60e.pdf pdf_icon

PHX6N60E

Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Isolated packageRDS(ON) 1.8 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

 9.1. Size:60K  philips
 phx6nd50e 2.pdf pdf_icon

PHX6N60E

Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 3.1 A High thermal cycling performanceg Isolated package RDS(ON) 1.5 Fast reverse recovery diodetrr = 180 ns

 9.2. Size:25K  philips
 phx6na60e.pdf pdf_icon

PHX6N60E

Philips Semiconductors Objective specification PowerMOS transistors PHX6NA60E Low capacitance Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Low feedback capacitance Stable off-state characteristics ID = 3.9 Ag High thermal cycling performance Low thermal resistance RDS(ON) 1.2

Datasheet: PHW9N60E , PHX2N50E , PHX2N60E , PHX3N40E , PHX3N50E , PHX3N60E , PHX4N60E , PHX4ND40E , IRF630 , PHX6NA60E , PHX6ND50E , PHX7N60E , PHX8N50E , PHX8ND50E , PMBF4391 , PMBF4392 , PMBF4393 .

History: IRFIB6N60A | 2N6768 | IXTP16N50PM | FDMC7672

Keywords - PHX6N60E MOSFET datasheet

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