All MOSFET. PHX6N60E Datasheet

 

PHX6N60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHX6N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: SOT186A

 PHX6N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHX6N60E Datasheet (PDF)

 ..1. Size:69K  philips
 phx6n60e.pdf

PHX6N60E PHX6N60E

Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Isolated packageRDS(ON) 1.8 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

 9.1. Size:60K  philips
 phx6nd50e 2.pdf

PHX6N60E PHX6N60E

Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 3.1 A High thermal cycling performanceg Isolated package RDS(ON) 1.5 Fast reverse recovery diodetrr = 180 ns

 9.2. Size:25K  philips
 phx6na60e.pdf

PHX6N60E PHX6N60E

Philips Semiconductors Objective specification PowerMOS transistors PHX6NA60E Low capacitance Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Low feedback capacitance Stable off-state characteristics ID = 3.9 Ag High thermal cycling performance Low thermal resistance RDS(ON) 1.2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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