RK7002AT116 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RK7002AT116

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: SOT-23

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RK7002AT116 datasheet

 ..1. Size:80K  rohm
rk7002at116.pdf pdf_icon

RK7002AT116

RK7002A Transistors Switching (60V, 300mA) RK7002A Features External dimensions (Units mm) 1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 1.3 6) Easy to use in parallel. 2.4 Structure Each lead has same dimensions Silicon N-channel MOSFET transistor ROHM SST3 (1) Source Abbreviated symbol RKS (2

 8.1. Size:212K  rohm
rk7002bt116.pdf pdf_icon

RK7002AT116

2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit mm) Silicon N-channel MOSFET SST3 Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol RKT Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T116 Basic ordering unit (pieces) 3000 RK7002B

 8.2. Size:233K  rohm
rk7002b.pdf pdf_icon

RK7002AT116

2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit mm) Silicon N-channel MOSFET SST3 Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol RKT Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T116 Basic ordering unit (pieces) 3000 RK7002B

 8.3. Size:1623K  rohm
rk7002bmhzg.pdf pdf_icon

RK7002AT116

RK7002BMHZG Datasheet Nch 60V 250mA Small Signal MOSFET AEC-Q101 Qualified lOutline l SOT-23 VDSS 60V SST3 RDS(on)(Max.) 2.4 ID 250mA PD 350mW lInner circuit l lFeatures l 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5)

Otros transistores... RJM0404JSC, RJM0603JSC, RJP020N06T100, RJU002N06FRA, RJU002N06T106, RJU003N03FRA, RJU003N03T106, RK3055ETL, IRF530, RK7002BM, RK7002BT116, RK7002T116, RND030N20, RP1A090ZPTR, RP1E050RPTR, RP1E090RPTR, RP1E100RPTR