PHX6ND50E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHX6ND50E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Id|ⓘ - Corriente continua de drenaje: 3.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: SOT186A
- Selección de transistores por parámetros
PHX6ND50E Datasheet (PDF)
phx6nd50e 2.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 3.1 A High thermal cycling performanceg Isolated package RDS(ON) 1.5 Fast reverse recovery diodetrr = 180 ns
phx6n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Isolated packageRDS(ON) 1.8 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh
phx6na60e.pdf

Philips Semiconductors Objective specification PowerMOS transistors PHX6NA60E Low capacitance Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Low feedback capacitance Stable off-state characteristics ID = 3.9 Ag High thermal cycling performance Low thermal resistance RDS(ON) 1.2
Otros transistores... PHX2N60E , PHX3N40E , PHX3N50E , PHX3N60E , PHX4N60E , PHX4ND40E , PHX6N60E , PHX6NA60E , AON6414A , PHX7N60E , PHX8N50E , PHX8ND50E , PMBF4391 , PMBF4392 , PMBF4393 , PMBF4416 , PMBF4416A .
History: NCE0250D | WSF20P03 | IPI80CN10NG
History: NCE0250D | WSF20P03 | IPI80CN10NG



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